FinFet LDMOS Prompt Shift Effect on Wi-Fi RF Power Amplifier Performance
Abstract
This paper discusses “Prompt Shift” effect observed in LDMOS devices when stressed at high voltages in FinFet technologies for Wi-Fi/IOT RF Power Amplifiers (PA). The measured performance change in RF PA due to this prompt shift is demonstrated. A design technique to mitigate the LDMOS prompt shift in RF PA and a novel, necessary on-chip stress circuit to achieve model to hardware correlation for Wi-Fi/IOT RF PA is illustrated.
Fields of Study & Subjects
Advanced Power Amplifier Design
Radio Frequency Integrated Circuit Design
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- 2026 IEEE International Reliability Physics Symposium (IRPS)
- Publisher
- IEEE
- Pages
- 1–6
- Publication date
- 22 March 2026