Early Detection of Random High-k Dielectric Failure using Laser-Induced Leakage-Current Mapping
Abstract
A novel method to detect potential defect sites leading to the eventual breakdown of high-k dielectrics has been proposed and examined using a laser-induced leakage-current mapping technique. In case of$\text{ZrO}_{2}$, defects created by high-field stress were found to be strongly correlated with hard breakdown. This method can be utilized to detect random failure points in capacitor arrays or other devices at an early stage of degradation.
Fields of Study & Subjects
Integrated Circuits and Semiconductor Failure Analysis
Semiconductor materials and devices
Copper Interconnects and Reliability
Publication details
- Journal / source
- 2026 IEEE International Reliability Physics Symposium (IRPS)
- Publisher
- IEEE
- Pages
- 1–6
- Publication date
- 22 March 2026