A 0.6V 625um 2 Fully Stacked RC-Based Temperature Sensor Using Low TCR Metal Resistor Achieving 0.017nJ.% 2 -Accuracy FoM in 2nm Gate-All-Around Process
Abstract
The proposed RC-based temperature sensor, fabricated on a 2 nm gate-all-around process, minimizes silicon area by fully stacking low temperature coefficient of resistance (TCR) metal resistors and a ring-oscillator time-to-digital converter. The conversion time is$12 \mu \mathrm{s}$by using a time-offset compression technique to overcome the disadvantage of a low TCR metal resistor while having$\pm 0.5^{\circ} \mathrm{C}(3 \sigma)$inaccuracy after 2-point calibration with a range of −40 to 125° C, resulting in accuracy-FoM of$0.017 \text{nJ} \cdot \%^{2}$.
Fields of Study & Subjects
Magnetic Field Sensors Techniques
Electrical and Thermal Properties of Materials
Sensor Technology and Measurement Systems
Publication details
- Journal / source
- 2026 IEEE International Solid-State Circuits Conference (ISSCC)
- Publisher
- IEEE
- Pages
- 372–374
- Publication date
- 15 February 2026