14.1 THz-TSI: A 0.33pJ/b 264Gb/s Through-Silicon Interconnect Module for 3D Integration Utilizing Terahertz Coupling
Abstract
A through-silicon interconnect module for 3D integration utilizing THz coupling is presented, which achieves a record high data rate of$264 ~\text{Gb} / \mathrm{s}$and efficiency of$0.33 \text{pJ} / \mathrm{b}$. Both bidirectional point-to-point link and broadcast mode are successfully demonstrated. This scheme offers highly competitive bandwidth and density with significantly simpler fabrication and lower cost. Furthermore, its high flexibility enables real-time adjustable interconnect topology to effectively reduce latency.
Fields of Study & Subjects
3D IC and TSV technologies
Advancements in PLL and VCO Technologies
Radio Frequency Integrated Circuit Design
Publication details
- Journal / source
- 2026 IEEE International Solid-State Circuits Conference (ISSCC)
- Publisher
- IEEE
- Pages
- 1–3
- Publication date
- 15 February 2026