21.9 A -82.3dB THD+N 60V Fully Integrated Shunt-Resistor-Based In-Line Current Sensor with DLL-Assisted Dynamic Body-Biasing Technique
Abstract
Floating-$\mathrm{G}_{\mathrm{m}}$-based current sensors are effective in rejecting PWM common-mode voltage. But their linearity drops at high voltages due to substrate-current-induced body effect in LDMOS devices. To address this issue, this work introduces a DLL-assisted dynamic body biasing sensor in$0.18 \mu \mathrm{m}$BCD, improving HD2 by 31 dB and THD+N by 14 dB. And a peak THD+N of −82.3 dB is achieved in the meanwhile. It supports 60 V common-mode, rejects PWM up to 2 MHz, and enables high-linearity sensing for high power audio and motor-driver systems.
Fields of Study & Subjects
Magnetic Field Sensors Techniques
Analog and Mixed-Signal Circuit Design
Sensor Technology and Measurement Systems
Publication details
- Journal / source
- 2026 IEEE International Solid-State Circuits Conference (ISSCC)
- Publisher
- IEEE
- Pages
- 380–382
- Publication date
- 15 February 2026