20.6 A 330-to-344GHz GaN Power Amplifier with Maximum-Available-Gain-Boosting Technique and Compact Tandem Coupler Achieving 86mW Output Power at 340GHz
Abstract
This paper demonstrates a 330-to-344GHz GaN power amplifier (PA), fabricated using a 35nm GaN HEMT process with a 15-stage cascaded architecture. The maximum-available-gain-boosting technique enhances the high frequency gain, while the miniaturized Tandem coupler reduces port reflection and combining losses. The PA achieves$>21 \text{dB}$gain,$>18 \text{dBm}$saturated output power$\left(\mathrm{P}_{\text{SAT}}\right)$, and$>0.6 \%$power-added efficiency. The peak PSATreaches 19.3dBm at 340GHz, with a power density exceeding 0.925W/mm.
Fields of Study & Subjects
Advanced Power Amplifier Design
GaN-based semiconductor devices and materials
Radio Frequency Integrated Circuit Design
Publication details
- Journal / source
- Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
- Pages
- 350–352
- Publication date
- 15 February 2026
- Language
- EN