A High Back-Off Efficiency Unequal-Stacked Doherty Power Amplifier Achieving 16.7dBm P avg in a 22nm FDSOI CMOS Technology for 5G FR2 Applications
Abstract
This paper proposes an unequal-stacked Doherty power amplifier. The proposed Doherty structure consists of a common-source topology for the carrier amplifier and an N-stacked topology for the peaking amplifier with a theoretically determined quarter-wave line. Thanks to the proposed Doherty structure, the back-off efficiency is enhanced. With a 5 GNR 64-QAM OFDM 100 MHz signal, the$\mathrm{P}_{\text{avg }}$and$\text{PAE}_{\text{avg }}$exceed 15.8 dBm and 16.9%, respectively, from 24 to 28 GHz with the EVM of −25 dB.
Fields of Study & Subjects
Advanced Power Amplifier Design
Radio Frequency Integrated Circuit Design
Analog and Mixed-Signal Circuit Design
Publication details
- Journal / source
- 2026 IEEE International Solid-State Circuits Conference (ISSCC)
- Publisher
- IEEE
- Pages
- 342–344
- Publication date
- 15 February 2026