15.3 An 8nm eMRAM for Auto-G1 with a 125MHz Read Speed at 0.6V and 19.94Mb/mm 2 Density

Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference 2026

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Authors: Hyunjin Shin, Gyuseong Kang, Yeseul Kim, Dohui Kim, Kyuseong Kim, Sunkyu Lee, Hangil Lee, Sanggyeong Won, Mijoung Kim, Jaeho Lee, Seungpil Ko, Jaechul Shim
+6 more S. H. Han, Kiseok Suh, Sohee Hwang, Hyunchang Lee, Jonghoon Jung, Sanghoon Baek
DOI: 10.1109/isscc49663.2026.11409300
Cited by: 0
References: 1

Abstract

This paper proposes techniques to improve read margin and write performance for an 8nm eMRAM: temperature compensation, resistance-mismatch improvement and margin-verify-write MVW. These techniques enable 8ns read and 300ns write operations for 283b at a time with a 128Mb density in a temperature range of −40 −150°C and from a 0.60V supply. A 19.94Mb/mm2memory macro is implemented and silicon validation shows a mass-production yield is achieved.

Fields of Study & Subjects

Advanced Memory and Neural Computing Magnetic properties of thin films Low-power high-performance VLSI design

Publication details

Journal / source
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
Pages
258–260
Publication date
15 February 2026
Language
EN