A 0.6V 9.4µW 1,892µm 2 Current-Pulse-Injection Crystal Oscillator Featuring Capacitively Biased Amplifier with 242.2dBc/Hz PN FoM @1KHz Offset
Abstract
We report a current-pulse injection-based Crystal Oscillator (XO). A capacitively biased amplifier, powered by the stacked capacitor power supply (SCPS), delivers a short boosted current pulse into the crystal to limit the amplifier's shoot-through current while upholding the XO's phase noise. Fabricated in 65nm CMOS, the XO core occupies$1,892 \mu \mathrm{m}^{2}$. The 16MHz XO consumes$9.4 \mu \mathrm{W}$at$0.6 \mathrm{V} V_{D \mathrm{D}}$, associated with a phase noise of$-137.9 \text{dBc} / \text{Hz}$@ 1kHz offset, corresponding to a superior FoM of 242.2 dBc/Hz.
Fields of Study & Subjects
Radio Frequency Integrated Circuit Design
Advancements in PLL and VCO Technologies
Analog and Mixed-Signal Circuit Design
Publication details
- Journal / source
- Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
- Pages
- 1–3
- Publication date
- 15 February 2026
- Language
- EN