An Integrated Voltage and Current Reference Together Achieving 5.7 and 9.1ppm/°C from −40 to 125°C

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Authors: Lele Fang, Yanan Zhu, Rui P. Martins, Chi‐Hang Chan
Cited by: 1
References: 7

Abstract

This work implements an integrated voltage and current reference circuit, which has low temperature drift. By ensuring the reuse of the main circuit, we propose a current-mirror-based seamless transition technique, which can be used to achieve sub-ranging compensation. Eventually, this work realizes 3rd-order compensation in two domains simultaneously, resulting in temperature coefficients of 5.7ppm/°C and 9.1ppm/°C for voltage and current references, respectively.

Fields of Study & Subjects

Advanced Electrical Measurement Techniques Semiconductor materials and interfaces Semiconductor materials and devices

Publication details

Journal / source
2026 IEEE International Solid-State Circuits Conference (ISSCC)
Publisher
IEEE
Pages
86–88
Publication date
15 February 2026