21.3 A Temperature- and Aging-Compensated TMR Current Sensor with ±0.13% Sensitivity Variation from −40°C to 120°C

2026 IEEE International Solid-State Circuits Conference (ISSCC) 2026

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Authors: Tianxiang Qu, Nan Wang, Kaiwen Zhou, Jianxing Liu, Longxi Xiang, Mingqian Sun, Zhiliang Hong, Xiaoyang Zeng, Jiayi Xu
DOI: 10.1109/isscc49663.2026.11409332
Cited by: 1
References: 7

Abstract

This paper presents a TMR-based contactless current sensor that mitigates sensitivity drift due to temperature and aging. The proposed sensitivity stabilization loop continuously adjusts the TMR sensitivity, making residual drift dependent only on the on-chip curvature- corrected current reference (IREF). A built-in stress sensor is used to further compensate the aging-induced drift of IREF. These techniques achieve ± 0.13% sensitivity variation from −40° C to 120° C and reduce the aging drift to 0.1% at 25° C.

Fields of Study & Subjects

Magnetic Field Sensors Techniques Sensor Technology and Measurement Systems Smart Materials for Construction

Publication details

Journal / source
2026 IEEE International Solid-State Circuits Conference (ISSCC)
Publisher
IEEE
Pages
368–370
Publication date
15 February 2026