Repetitive Gate-HBM-ESD-Induced V th Degradation for RF GaN HEMT With Matching Networks

The gate-HBM-ESD characteristics of GaN HEMTs integrated with matching networks in package level have been investigated under the positive and negative stresses. For comparison, the GaN HEMTs without matching networks are simultaneously examined to elucidate the influences of the matching networks. Results demonstrate that the matching networks cannot significantly alter the ESD robustness both for the positive and negative stresses. However, after the repetitive non-destructive ESD stresses, pinch-off voltage degradation and input/output impedance shifts are observed, which result in potential mismatch risks for these pre-matched devices. A pinch-off voltage degradation difference is found under the negative stress when compared to the devices without matching networks. During this discharge process, the integrated matching networks can suppress the peak of the gate waveform and the generation of the field-induced damages are reduced.