Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Method

IEEE Journal of the Electron Devices Society 2026 Open access

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Authors: Qianwen Guo, Jiawei Cao, Ke Zhou, Fang Liu, Dongyan Zhao, Yanning Chen, Bo Wu, Yongfeng Deng, Dawei Gao, Xugang Ke, Junkang Li, Rui Zhang
DOI: 10.1109/jeds.2026.3661617
Cited by: 0
References: 17

Fields of Study & Subjects

Semiconductor materials and devices Integrated Circuits and Semiconductor Failure Analysis Electrostatic Discharge in Electronics

Publication details

Journal / source
IEEE Journal of the Electron Devices Society
Volume
14
Pages
145–150
Publication date
1 January 2026