Memory Window Enhancement With Germanium-Incorporated Charge Trap Layer in Flash Memory Device

IEEE Journal of the Electron Devices Society 2026 Open access

Read full text
Authors: Geonhee Shin, Youngkeun Park, Jaejoong Jeong, Heetae Kim, Byung Jin Cho
DOI: 10.1109/jeds.2026.3661982
Cited by: 1
References: 26

Fields of Study & Subjects

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Advanced Data Storage Technologies

Publication details

Journal / source
IEEE Journal of the Electron Devices Society
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
14
Pages
122–126
Publication date
1 January 2026