Application of Spontaneous Oscillation Theory Derived From SiC Light-Controlled Self-Oscillators in Microwave Generation Technologies With Different Center Frequencies

Spontaneous oscillation photoconductive semiconductor switch device that utilizing the vanadium-doped silicon carbide substrate offers a possibility for microwave generation with different center frequencies. However, spontaneous oscillation lacks a well-defined essence for tight confinement, thus seriously affecting the development. Here, an innovative microwave signal oscillator with different center frequencies derived from the spontaneous oscillation of photoconductive semiconductor switches by using dislocation defects in vanadium-doped 4H-SiC is proposed. This is the unique demonstration of broadband microwave generation with different center frequencies based on material properties. It is promising that this study contributes to gain more insight into the nature of the spontaneous oscillation, and offers critical insights for defect engineering, crystal growth optimization as well as the development of dislocation-enhanced semiconductor devices.