SiC MOSFET Power Module With a Compact Spatially Symmetric Double-Sided Embedded Packaging Method for High-Temperature Applications up to 500 °C

The pursuit of higher temperatures, frequencies, and power densities in power converters has significantly elevated the performance demands on power modules. Existing designs struggle to support SiC MOSFETs operating at extremely high temperatures beyond 300°C. To overcome these limitations, this study presents a SiC MOSFET power module utilizing a compact spatially symmetric double-sided embedded (CSS-DSE) packaging method. This packaging method significantly extends the maximum operating temperature limit by employing a high-temperature packaging material system with high-temperature resistance, high thermal conductivity, and well-matched coefficients of thermal expansion (CTE), as well as integrating key technologies such as an integrated terminal structure, planar interconnections that replace wire bonds, and an optimized nano-silver sintering process. Furthermore, the module’s overall electro-thermal performance is comprehensively enhanced by a compact planar interconnect structure, a multi-plane electromagnetic cancellation design, the proximity placement of decoupling capacitors, Kelvin source connections, optimized thermal paths, and a symmetric electro-thermal path design. Static and switching characteristics of SiC MOSFETs were evaluated using the fabricated module over an extended temperature range of 25°C to 500°C, providing insight into the underlying physical mechanisms governing their temperature-dependent behavior. Finally, a heatsink-free power converter based on the fabricated module was successfully operated with a junction temperature of 508°C. Experimental results validate the module’s high-temperature performance, enabling a significantly extended practical operating temperature range for SiC MOSFETs.