An Analytical Model of the SiC MOSFET Body Diode Over a Wide Range of Operating Conditions
Abstract
The temperature-dependent reverse recovery characteristics of the SiC MOSFET body diode are comprehensively investigated in this paper. Initially, the switching transient of the SiC MOSFET body diode is divided into eight phases, and the switching behavior in each phase is discussed. The analysis of the diode reverse recovery charge and its dependency on temperature and load current reveals the unipolar and bipolar characteristics of the body diode, which are modeled analytically. Based on device physics, the minority carrier build-up during the dead time and minority carrier recombination during the current falling time are modeled. To model the minority charge dynamics, a charge equivalent capacitanceCeqis introduced, and its analytical expression is derived. The simulation results are compared with test data, and good agreement is achieved.
Fields of Study & Subjects
Silicon Carbide Semiconductor Technologies
Advancements in Semiconductor Devices and Circuit Design
Electromagnetic Compatibility and Noise Suppression
Publication details
- Journal / source
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 14
- Issue
- 5
- Pages
- 1–1
- Publication date
- 1 January 2026
- Language
- EN