High-Power High-Efficiency K-Band Photodiodes via Depletion–Inductance Co-Optimization
Abstract
A design methodology for modified uni-traveling-carrier photodiodes (MUTC-PDs) is presented to maximize RF output power under both bandwidth (> 20 GHz) and responsivity (> 0.8 A/W) constraints. The proposed approach simultaneously optimizes the epitaxial structure—particularly the depletion layer profile—and the microwave transmission electrode layout, thereby balancing the RC-limited and transit-time-limited bandwidths to provide enhanced design margin for power scaling. The optimized device exhibits a bandwidth exceeding 20 GHz across a photocurrent range of 10–110 mA, achieving a power conversion efficiency (PCE) of 26.7% at 20 GHz and a responsivity reach 0.9 A/W under −6 V bias. At a higher bias of −7.5 V, a high RF output power of 24.1 dBm is demonstrated.
Fields of Study & Subjects
Advanced Photonic Communication Systems
Radio Frequency Integrated Circuit Design
Superconducting and THz Device Technology
Publication details
- Journal / source
- Journal of Lightwave Technology
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 44
- Issue
- 9
- Pages
- 3662–3669
- Publication date
- 11 February 2026