Towards 100 GHz Waveguide Ge/Si Avalanche Photodiodes for High-Speed Optical Interconnects

Journal of Lightwave Technology 2026

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Authors: Amir Shahin, Conor Coughlan, Hakim Kobbi, Mathias Berciano, Didit Yudistira, Roger Loo, Shuchi Kaushik, Patrick B. Carolan, Marta Agati, Peter Verheyen, Maumita Chakrabarti, Dimitrios Velenis
+5 more Yoojin Ban, Filippo Ferraro, Peter Ossieur, Dries Van Thourhout, Joris Van Campenhout
DOI: 10.1109/jlt.2026.3670103
Cited by: 0
References: 16

Abstract

We report on the design, modeling, and measurements of high-speed, silicon-contacted, waveguide-coupled Germanium-on-Silicon (Ge/Si) avalanche photodiodes (APDs) fabricated on 300 mm Silicon On insulator (SOI) wafers. The devices achieve a peak 3-dB bandwidth (BW) exceeding 100 GHz and maintain 70 GHz BW at a responsivity of 2 A/W in both the O- and C-bands, at a relatively low reverse bias of 7 V. These results demonstrate the strong potential of Ge/Si APDs to be used for next-generation short-reach optical interconnects targeting 400 Gbps per lane operation.

Fields of Study & Subjects

Photonic and Optical Devices Semiconductor Lasers and Optical Devices Advanced Photonic Communication Systems

Publication details

Journal / source
Journal of Lightwave Technology
Volume
44
Issue
16
Pages
6958–6964
Publication date
3 March 2026
Language
EN