GaN-Based Green Resonant Cavity Light Emitting Diodes With Different Notch-Filter-Film Structure DBRs

The rapid development of gallium nitride-based (GaN-based) light-emitting diodes has led to their increasing applications in fields such as optical communications, lighting, and display technologies. For GaN-based green resonant-cavity light emitting diodes (RCLEDs), achieving a narrower emission linewidth, smaller divergence angles, and higher light output power (LOP) are essential goals for further expanding their application fields. In this study, RCLED devices incorporating different notch-filter-film structures (NFFS) distributed Bragg reflectors (DBRs) were successfully fabricated. The introduction of the NFFS-DBR significantly enhanced the devices optical performance. Specifically, the fabricated RCLEDs exhibited a highly pure single emission peak at a wavelength of 519.9 nm, accompanied by an exceptionally narrow linewidth of approximately 2.6 nm. This narrow linewidth is a critical indicator of superior color purity and spectral stability, which are essential for high-precision applications. Furthermore, the devices demonstrated a remarkably small divergence angle of 30° at the central lobe, contributing to improved light directionality and coupling efficiency. The devices maintained a stable and high LOP of around 30.6 mW. This combination of high spectral purity, directional emission, and robust LOP is a notable advancement, which provides a valuable pathway and is significant for accelerating their actual applications in next-generation high-speed communication systems and advanced display technologies.