Lithography-Free Mesa Isolation by Laser Ablation for Multijunction III-V Photovoltaic Space Power Generation

Eliminating photolithography from photovoltaic device processing is a significant opportunity for cost reduction and increased manufacturing throughput. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation of multijunction devices. We demonstrate that upright multijunction devices isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline device processed with photolithography. By contrast, devices isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with postprocess etching. This demonstration of photolithography-free mesa isolation with no performance losses is promising as a pathway to less expensive and higher throughput III-V device manufacturing.