Monolithically Integrated UV Photodetector Based on p-NiO/GaN HEMTs

IEEE Sensors Journal 2026

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Authors: Pingyu Cao, Zhengxuan Li, Kepeng Zhao, Yihao Xu, Jie Jiao, Xujun Su, Harm van Zalinge, Ping Zhang, Miao Cui, Fei Xue
DOI: 10.1109/jsen.2026.3655027
Cited by: 1
References: 33

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Transition Metal Oxide Nanomaterials

Publication details

Journal / source
IEEE Sensors Journal
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
26
Issue
5
Pages
6872–6878
Publication date
23 January 2026