A High- Q Coupled Dual-Beam Piezoelectric MEMS Resonator for Frequency Control Applications

To mitigate the substantial degradation of the quality factor (Qfactor) in traditional piezoelectric microelectromechanical systems (MEMS) resonators, primarily due to anchor loss and mode competition, this study introduces a coupled dual-beam structure based on aluminum nitride (AlN) for piezoelectric resonators. By jointly optimizing the geometric configuration and material stacking of the coupled dual-beam, and exploiting the mechanical coupling effect in the bending mode, effective suppression of anchor loss and energy localization was achieved. Experimental results demonstrate that the proposed resonator attains aQfactor of 1479.17 at a resonant frequency of 301.74 kHz. The device has a temperature coefficient of frequency (TCF) of -27.67 ppm/°C, exhibiting good frequency-temperature linearity. In terms of the manufacturing process, the critical dimensional error of the structure is less than 1 μm, while maintaining compatibility with CMOS processes, ensuring high-precision fabrication and integration. This study validates the potential of the coupled dual-beam structure in improving theQfactor of MEMS resonators, laying a solid foundation for advancing device miniaturization and multifunctional integration.