A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988- μ m Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications

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Authors: Min-Woong Seo, Yongsuk Choi, Sanggwon Lee, Yeongseok Shim, Gihwan Cho, Daehee Bae, Masamichi Ito, Jaehun Jeong, Hiroyuki Sugihara, Seungbeom Koo, Sung-Jae Byun, Hyukbin Kwon
+16 more Youna Lee, Byung‐Soo Kim, Su-Hyun Han, Suksan Kim, Wonoh Ryu, Kwan-Sik Kim, Y J Kim, Seung-Sik Kim, Junghoon Jung, Sun-Young Yoo, Jinkyeong Heo, Seung-Chul Shin, Heesung Shim, Jae-Kyu Lee, Jonghyun Go, Jaihyuk Song
Cited by: 1
References: 24

Abstract

This article presents a 3-Mpixel (Mp) three-stacked digital pixel sensor (DPS) featuring the world’s smallest pixel pitch of$2.988~\mu $m, achieving a low temporal random noise (RN) of 1.16 e-rms and a high dynamic range (HDR) of 123 dB in global-shutter (GS) operation mode for versatile applications. To realize both the low RN and HDR performance, the developed DPS employs a pixel-parallel analog-to-digital converter (P-ADC) architecture with an extremely narrow noise bandwidth (BW), as well as a split photodiode (PD) structure combined with signal chopping operation to mitigate the LED flicker phenomenon. In addition, the DPS leverages a three-stacked sensor architecture, which enables a compact pixel footprint while enhancing on-chip image signal processing (ISP) capabilities and supporting efficient HDR merging. Chip-level evaluations confirm the superior performance of the proposed DPS, demonstrating its potential for high-performance imaging in mobile, automotive, machine vision (MV), and other advanced applications.

Fields of Study & Subjects

CCD and CMOS Imaging Sensors Advanced Optical Sensing Technologies Analog and Mixed-Signal Circuit Design

Publication details

Journal / source
IEEE Journal of Solid-State Circuits
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
61
Issue
4
Pages
1319–1332
Publication date
2 March 2026