Quantum-Dot Surface-Emitting Lasers: Micropillar Cavities Grown by Molecular-Beam Epitaxy

IEEE Journal of Selected Topics in Quantum Electronics 2026

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Authors: A. V. Babichev, I. Makhov, N. Kryzhanovskaya, Yakov N. Kovach, A. A. Blokhin, Yuriy Zadiranov, Yulia Salii, M. M. Kulagina, M. Bobrov, Alexey Vasil’ev, S. A. Blokhin, N. A. Maleev
+3 more L. Ya. Karachinsky, Innokenty Novikov, A. Egorov
DOI: 10.1109/jstqe.2026.3662809
Cited by: 2
References: 46

Abstract

Micropillar cavity lasers demonstrate operation up to 255 K. At this temperature, the lasing threshold and Q-factor, extracted at lasing threshold for a 4 μm diameter pillar are about 2 mW and 16800. For pillar lasers, the concept of which is based on an optical aperture, continuous-wave lasing is realized at room temperature (300 K). For a 15 μm diameter pillar with an aperture of 4 μm, single-mode lasing at 960 nm is demonstrated with a threshold power of about 12 mW and a Q-factor at threshold of 13000.

Fields of Study & Subjects

Semiconductor Lasers and Optical Devices Semiconductor Quantum Structures and Devices Photonic and Optical Devices

Publication details

Journal / source
IEEE Journal of Selected Topics in Quantum Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
32
Issue
6: Special Issue on Advances in
Pages
1–8
Publication date
9 February 2026