Linewidth Narrowing of InP-Based Lasers by Self-Injection Locking With a Monolithically Integrated Ring Resonator
Abstract
A new monolithically integrated self-injection locking scheme, based on a ring resonator and a reflector, is demonstrated for InP lasers. We compare three different configurations, focusing particularly on the Lorentzian linewidth: an SGDBR with a Sagnac reflector, a DFB with a Sagnac reflector and a DFB with an MMI reflector. Of the three, the MMI DFB configuration is found to be superior for FMCW applications. It achieved the narrowest Lorentzian linewidth of 33 kHz and direct frequency modulation shows a chirp range of up to 6.8 GHz for this laser configuration. The Sagnac SGDBR has a larger tuning range of 30 nm and a slightly wider Lorentzian linewidth of 41 kHz. Integrated photodiodes allow electrical stabilization to minimum linewidth operation.
Fields of Study & Subjects
Semiconductor Lasers and Optical Devices
Advanced Photonic Communication Systems
Photonic and Optical Devices
Publication details
- Journal / source
- IEEE Journal of Selected Topics in Quantum Electronics
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 32
- Issue
- 5: Self-Injection Locked Lasers
- Pages
- 6100607–6100607
- Publication date
- 21 April 2026
- Language
- EN