A 5.8-GHz GaN High-Power Rectifier With Harmonic-Compression Network for Space-Based Wireless Power Transmission

This paper presents the design, fabrication and xperimental validation of a high-power and high-efficiency 5.8 GHz voltage-doubling rectifier for wireless power transfer (WPT) in space-based solar power (SBSP) systems. The proposed rectifier leverages a custom-developed GaN-on-SiC Schottky barrier diode (SBD) and a harmonic compression circuit topology to simultaneously achieve watt-level power handling and superior efficiency. The proposed GaN SBD features a Y-shaped anode geometry, yielding a superior breakdown voltage exceeding 200 V, an ultra-low zero-bias junction capacitance of 0.34 pF, a threshold voltage of 1.25 V and a series resistance of 11 Ω (specific on-resistance Ron,sp= 3.87 Ω·mm) and maintains stable performance at elevated temperatures up to 400 K. These characteristics facilitate efficient rectification under high input power conditions. At the circuit level, two one-eighth-wavelength microstrip transmission lines form a harmonic compression network that provides a DC path, in-band reactive compensation and second-harmonic suppression, thereby eliminating the requirement for conventional LC filters. Experimental results demonstrated a peak RF-to-DC conversion efficiency of 73.3% at an input power level of 40 dBm. These results verify that co-optimizing the GaN device and the circuit topology enables scalable and efficient microwave power conversion for high-power SBSP WPT systems.