High Responsivity Optically-Triggered Vertical GaN Heterojunction Power Switches With kHz Operation
Abstract
Optically controlled power switches could reduce circuit complexity and electromagnetic interference (EMI) susceptibility for high-voltage power systems. This work demonstrates a novel LED-triggered vertical GaN junction switch (Op-VJS) with sub-millisecond turn-off. The devices show a large optical response (R > 103A/W) and high on-off current ratio exceeding 105when illuminated by a 365 nm LED, translating to opticalRon,spof 20 mΩcm². The Op-VJS uses p-NiOx/n-GaN heterojunction fins to eliminate minority carrier screening, as a result, τoffof 90 μs was successfully achieved. This performance underscores the great potential of the proposed device for low-cost, optically controlled high-voltage power applications.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Advanced Power Amplifier Design
Publication details
- Journal / source
- IEEE Electron Device Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 47
- Issue
- 3
- Pages
- 498–501
- Publication date
- 5 January 2026