Monolithically Integrated AlGaN-Based Micro-Diode Array for Real-Time Deep-UV to Visible Pattern Imaging

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Authors: Zixun Wang, Huabin Yu, Dongyang Luo, Xin Liu, Zhixiang Gao, Yang Kang, Yuanmin Luo, Rui Wang, Jikai Yao, Wengang Gu, Y. Yong, Reza Taheri Ghahrizjani
+2 more Muhammad Hunain Memon, Haiding Sun
Cited by: 1
References: 30

Abstract

Deep ultraviolet (DUV) imaging is essential for pattern recognition, mask inspection, and compact optical sensing under solar-blind conditions. We present a monolithically integrated AlGaN multiple quantum wells (MQWs) micro-diode array that enables sensing-processing-imaging functionality within a single platform, thereby simplifying real-time DUV-to-visible pattern visualization. Each diode functions as a self-powered photodetector (PD) with a responsivity of 170 mA/W and a fast response time of 4.24 ns. Upon integration with perovskite quantum dots (QDs), efficient down-conversion of DUV light into green emission is achieved, accompanied by high luminous efficiency. The DUV-induced photocurrent is amplified by a custom designed transimpedance amplifier (TIA) and used to drive the QD-coated diodes. Visible emission occurs only above a 4.4 V threshold, enhancing imaging contrast and suppressing noise. The PD bias can be tuned to filter different DUV background levels. System demonstrations confirm pixel-resolved, real-time visualization of DUV illuminated patterns.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Thermal Radiation and Cooling Technologies

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
3
Pages
546–549
Publication date
12 January 2026