Monolithically Integrated AlGaN-Based Micro-Diode Array for Real-Time Deep-UV to Visible Pattern Imaging
Abstract
Deep ultraviolet (DUV) imaging is essential for pattern recognition, mask inspection, and compact optical sensing under solar-blind conditions. We present a monolithically integrated AlGaN multiple quantum wells (MQWs) micro-diode array that enables sensing-processing-imaging functionality within a single platform, thereby simplifying real-time DUV-to-visible pattern visualization. Each diode functions as a self-powered photodetector (PD) with a responsivity of 170 mA/W and a fast response time of 4.24 ns. Upon integration with perovskite quantum dots (QDs), efficient down-conversion of DUV light into green emission is achieved, accompanied by high luminous efficiency. The DUV-induced photocurrent is amplified by a custom designed transimpedance amplifier (TIA) and used to drive the QD-coated diodes. Visible emission occurs only above a 4.4 V threshold, enhancing imaging contrast and suppressing noise. The PD bias can be tuned to filter different DUV background levels. System demonstrations confirm pixel-resolved, real-time visualization of DUV illuminated patterns.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Ga2O3 and related materials
Thermal Radiation and Cooling Technologies
Publication details
- Journal / source
- IEEE Electron Device Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 47
- Issue
- 3
- Pages
- 546–549
- Publication date
- 12 January 2026