GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)

IEEE Electron Device Letters 2026

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Authors: Yihao Zhuang, Siyu Liu, Pengju Cui, Viet Cuong Nguyen, Qingyun Xie, Ravikiran Lingaparthi, Hanchao Li, Hanlin Xie, Dharmarasu Nethaji, Ameera Nur, Xavier Teo Leng Seah, Stefan Degroote
+3 more Marianne Germain, K. Radhakrishnan, Geok Ing Ng
DOI: 10.1109/led.2026.3651778
Cited by: 2
References: 24

Abstract

This Letter reports a GaN-on-Si HEMT technology with 60 to 150 nm T-gate achieving simultaneous high efficiency and low noise at low voltage (3-6 V) RF operation, suitable for monolithic integrated FR2 mobile Transmit/Receive (T/R) modules. At 30 GHz and VDS = 5 V, in continuous wave operation, the fabricated Lg = 100 nm device delivered a saturated output power of 1.2 W/mm with a record-high peak power-added efficiency (PAE) of 62% while maintaining a state-of-the-art minimum noise figure (NFmin) of 1.1 dB. Enabled by the optimized epitaxial structure and fabrication process, the proposed technology, even with moderate scaling, offers a cost-effective solution for FR2 T/R modules.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advanced Power Amplifier Design Semiconductor Quantum Structures and Devices

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
3
Pages
482–485
Publication date
22 January 2026
Language
EN