0.53-mΩ.cm 2 /592-V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination

IEEE Electron Device Letters 2026

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Authors: Hugo Bouillaud, Beatriz Mayumi Kayo Orfão, Etienne Okada, Yannick Roelens, Malek Zegaoui, Mohammed Zaknoune
DOI: 10.1109/led.2026.3652934
Cited by: 2
References: 30

Abstract

In this letter, we report high-performance Pt/GaN quasi-vertical Schottky barrier diodes on sapphire substrate. With a 5 μm drift layer and a highly controlled fabrication process, the devices demonstrate an extremely low on-resistance of 0.53 mΩ.cm² while exhibiting a high breakdown voltage of 592 V. The devices achieve a state-of-the-art Baliga’s figure of merit of 0.66 GW.cm-2. The turn-on voltage is also notably low at 0.72 V. Remarkably, the high device performance reported in this work was achieved without the use of passivation or edge termination techniques, in clear contrast to other recent studies.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Ga2O3 and related materials

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
3
Pages
462–465
Publication date
12 January 2026
Language
EN