Lateral Leakage Suppression Using H 2 Plasma-Treated SiN x for High-Resolution Organic Displays

Lateral hole leakage between adjacent anode electrodes limits achievable pixel density in high-resolution organic light-emitting diodes. In this work, we propose a surface-charge engineering approach that enhances the electrostatic shielding of a SiNxlayer positioned between anode electrodes beneath the hole injection layer (HIL) through H2plasma treatment. Using a test structure consisting of a HIL deposited on two anode electrodes, H2plasma treatment of the SiNxlayer reduces the lateral leakage current by more than six orders of magnitude at a 2 μm anode spacing compared with untreated structures. Spectroscopic and surface-potential analyses confirm the formation of positive surface charges on the SiNxsurface, while simulations indicate that the resulting electrostatic barrier effectively suppresses leakage through the hole-conducting polymer. These results demonstrate an effective electrostatic shielding strategy applicable to device architectures relevant to high-resolution organic display devices.