A CMOS-Compatible Heterogeneous 3-D Integration Platform for Silicon Nanoelectromechanical Switches

IEEE Electron Device Letters 2026 Open access

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Authors: Yingying Li, Simon J. Bleiker, Elliott Worsey, Mukesh Kumar Kulsreshath, Qi Tang, Christian Reich, Stefan Ernst, Shyamprasad N. Raja, August Djuphammar, Kristinn B. Gylfason, Dinesh Pamunuwa, Frank Niklaus
DOI: 10.1109/led.2026.3655495
Cited by: 1
References: 32

Abstract

Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.

Fields of Study & Subjects

Mechanical and Optical Resonators Advanced MEMS and NEMS Technologies Nanowire Synthesis and Applications

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
3
Pages
598–601
Publication date
19 January 2026
Language
EN