A Superjunction MOSFET Exploiting Reverse Active BJT to Reduce Reverse Recovery Charge

IEEE Electron Device Letters 2026

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Authors: Tongyang Wang, Zehong Li, Xuan Wang, Ziming Xia, Yige Zheng, Zhaoqing Jin, Peng Zhang
DOI: 10.1109/led.2026.3655759
Cited by: 1
References: 21

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies Quantum-Dot Cellular Automata

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
3
Pages
446–449
Publication date
23 January 2026