An Effective Mobility Extraction Methodology for Cryogenic MOSFETs at 4 K
Abstract
An I–V-based method to extract effective mobility (μeff) in deep-submicron NMOS and PMOS devices at 4 K is presented. The method uses a high-order derivative technique, “Shift-and-Ratio” threshold extraction, and physics-based fitting to decompose scattering mechanisms without RF or C-V measurements. Results on a 55-nm process show distinct geometry-dependent μeffscaling. Long-channel devices follow the conventional bell-shaped profile, while short-channel devices deviate significantly. This work presents an I–V-only extraction framework with scattering decomposition at 4 K, enabling practical cryogenic compact model development.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- IEEE Electron Device Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 47
- Issue
- 3
- Pages
- 438–441
- Publication date
- 20 January 2026