Characterization of Thermal Stability and Unexpected Mobility Enhancement in IGZO FETs Measured Up to 750 °C

IEEE Electron Device Letters 2026

View at publisher

Authors: Kisoo Nam, Chang Niu, Hyeongjun Jang, Beomjin Park, Yoonju Park, Youngjoon Lee, Muhammad A. Alam, Changwook Jeong, Peide D. Ye

DOI: 10.1109/led.2026.3656803

Cited by: 3

References: 22

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies Ferroelectric and Negative Capacitance Devices

References 22