Matched Threshold Voltage of n-Si/p-SiGe Hybrid-Channel Gate-All-Around CMOS Transistors Using a Single LaFMD Dipole With the Same n-Type Metal Gate

In this work, to address the issues of current mismatch and threshold voltage (VT) asymmetry in n/p GAAFETs, a single La(iPr2-FMD)3(LaFMD) dipole combined with the same n-type metal gate (MG) is proposed for n-Si/p-SiGe hybrid-channel (HC) gate-all-around (GAA) CMOS transistor. First, after the same n-type MG is employed for this HC GAA CMOS transistor, a matched n/p drive current (ION) is achieved at same overdrive voltage |VGS| -|VT| = 0.6 V, but their VTNand VTPboth exhibit positive shifts. Then, 5-cycle LaFMD dipole is further introduced to simultaneously obtain matched VTand ION. For example, matched VTof -0.25/0.28 V for pFET/nFET is attained. Meanwhile, this dipole can further improve the interface quality of the channel, resulting in lower SS (nFET: 75.5 to 66.0 mV/dec, pFET: 87.7 to 79.3 mV/dec). Owing to the matched VT, the inverter of this HC-GAAFET demonstrates good symmetry with a relatively high peak voltage gain of 35.26 V/V, further demonstrating its application potential.