Physics-Based Model for Threshold Voltage Drift of Ovonic Threshold Switch (OTS)

IEEE Electron Device Letters 2026

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Authors: Paolo Fantini, Joe McCrate
DOI: 10.1109/led.2026.3659475
Cited by: 0
References: 33

Abstract

This work investigates the cross time and temperature drift of the threshold voltage (VT ) of ovonic threshold switch (OTS) selector in the 3DXPointTMtechnology. A physics-based model, accounting for the activation energy spectrum of structural relaxation (SR) phenomena at the basis of the VTdrift, has been developed. The model has been validated by comparison with an extensive electrical characterization of 3DXPointTMchips.

Fields of Study & Subjects

Phase-change materials and chalcogenides Advanced Memory and Neural Computing Semiconductor materials and devices

Publication details

Journal / source
IEEE Electron Device Letters
Volume
47
Issue
4
Pages
796–799
Publication date
3 February 2026