Fluctuation-Induced Tunneling Conduction: A Universal Model for Temperature-Dependent Transport in Oxide Semiconductor Transistors

IEEE Electron Device Letters 2026

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Authors: Ke Hu, Jiawei Wang, Ling Li

DOI: 10.1109/led.2026.3659878

Cited by: 0

References: 22

Fields of Study & Subjects

Semiconductor materials and devices Electronic and Structural Properties of Oxides Thin-Film Transistor Technologies

References 22