A Snapback-Free MOS-Triggered Thyristor With Modulated Thyristor Ratio for Ultra-High Pulsed Current Capability

A snapback-free MOS-triggered thyristor with modulated thyristor ratio (SFMR-MCT) has been developed for high-current pulsed power applications. The proposed device integrates a large-area N⁺ emitter and a compact P⁺ turn-off region within a single P-Well to achieve a high thyristor area ratio. And a carrier storage (CS) layer is introduced beneath the P⁺ region to accelerate regenerative triggering and eliminate forward snapback. These two features jointly enhance the pulse performance. Experimental results show that the SFMR-MCT delivers a peak current (IPEAK) of 4.28 kA and adi/dtcapability of 94.06 kA/μs at 1600 V, representing improvements of 67% and 34% over the conventional device, respectively. The device maintains stable performance under repetitive pulsed conditions, demonstrating strong potential for reliable high-voltage switching systems.