Fabrication of Si-Based Ga 2 O 3 Avalanche Photodiode With Ultrahigh Responsivity and Detectivity
Fields of Study & Subjects
Ga2O3 and related materials
Advanced Semiconductor Detectors and Materials
Photonic and Optical Devices
Publication details
- Journal / source
- IEEE Electron Device Letters
- Volume
- 47
- Issue
- 4
- Pages
- 776–779
- Publication date
- 6 February 2026