2.9-kV Enhancement-Mode GaN Monolithic Bidirectional Switch Based on Gate Post-Annealing-Free Oxygen Plasma Treatment

IEEE Electron Device Letters 2026

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Authors: Zifeng Qu, Ang Li, Yunsong Xu, Xiaodong Zhang, Guohao Yu, Chao Long, Wen Liu, Huiqing Wen

DOI: 10.1109/led.2026.3661591

Cited by: 0

References: 26

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Ga2O3 and related materials

References 26