Stable and Large Resistive Switching in Hafnia-Based Superlattice Ferroelectric Films

Conductive filament based resistive switching receives extensive attentions due to its potential in achieving high-density and non-destructive read-out memory applications. However, it faces inherent limitation in attaining large on/off ratio with high endurance characteristics. We introduce a novel approach to overcome this limitation by precisely controlling the profiles of oxygen vacancy filaments in superlattice ferroelectric Hf0.5Zr0.5O2-ZrO2films. The formation of “thin” filaments significantly improves the endurance of the resistive switching, with ultra-small variation and large RHRS/RLRS ratios of over 102for 108cycles. These findings carry significant implications for the fabrication of high-endurance and large resistive switching devices.