High-Power Diamond Photoconductive Switch With Sub-Bandgap Responsivity

IEEE Electron Device Letters 2026

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Authors: Langning Wang, Shiyu Cui, Bohan Li, Ripin Wang, Tao Xun
DOI: 10.1109/led.2026.3665044
Cited by: 2
References: 31

Abstract

In this study, a vertical diamond photoconductive semiconductor switch with sub-bandgap responsivity was developed. The device was fabricated on a 0.5 mm thick, nitrogen-doped diamond substrate. A sub-nanosecond laser pulse with a wavelength of 355 nm was used to axially trigger the device through a metal grid electrode. Under the 350-μJ 355-nm sub-ns laser pulse illumination and DC bias voltages of up to 20 kV (electric field: 20 kV/0.5mm=40 kV/mm), the device achieved sub-ns pulses with a peak current of 102 A, corresponding to a power capacity of 2 MW. The device Ron/Roffratio is greater than 1011. This work highlights the potential of diamond in building ultrafast high-power photoelectric device.

Fields of Study & Subjects

Pulsed Power Technology Applications Diamond and Carbon-based Materials Research Laser Material Processing Techniques

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
4
Pages
792–795
Publication date
16 February 2026