Patterned Quantum Dot Light-Emitting Diode Array Based on BNNS-Assisted Heat Release

Reducing the accumulation of heat is crucial for improving the stability of quantum-dot light-emitting diodes (QLEDs). Improving the heat dissipation capability of devices is one of the ideal solutions. Here, we modify boron nitride nanosheets (BNNS) with high thermal conductivity and apply them to photoresist to construct a patterned barrier layer, which is then used for auxiliary heat release in QLEDs. The QLEDs with BNNS has a maximum external quantum efficiency (EQE) of 14.2% and a peak brightness of 51379 cd/m2, and the device lifetime is enhanced by 120%. The effective conduction of Joule heat through BNNS provides a lower temperature working environment for QLEDs, suppresses the decrease in EQE of the device, improves spectral stability, and extends the service life of the device. This strategy confirms that the accumulation of Joule heat is the main obstacle to achieving high stability and long lifespan of QLEDs, providing an efficient and stable solution for thermal management of QLEDs.