Ta-Sb-Te Phase Change Memory Device With Reduced Multilevel Resistance Drift for Deep Neural Network Applications

IEEE Electron Device Letters 2026

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Authors: Ziqi Wan, Ruoqin Wang, Ruobing Wang, Jia Zheng, Yuehua Chen, Xixi Zou, Xi Li, Sannian Song, zj Song, Xilin Zhou

DOI: 10.1109/led.2026.3687253

Cited by: 1

References: 23

Fields of Study & Subjects

Phase-change materials and chalcogenides Advanced Memory and Neural Computing Chemical and Physical Properties of Materials

References 23