Ultralow-Voltage BEOL-Compatible HZO Ferroelectric Memcapacitors for Neuromorphic Computing

IEEE Electron Device Letters 2026

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Authors: Shiyu Zhang, Yuyuan Wu, Kejun Tan, Puqi Hao, Binjian Zeng, Qiong Yang, Shuaizhi Zheng, Qiangxiang Peng, Yichun Zhou, Min Liao
DOI: 10.1109/led.2026.3687388
Cited by: 1
References: 25

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Magnetic properties of thin films

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
6
Pages
1113–1116
Publication date
28 April 2026