Demonstration of High-Performance Ultra-Wide Bandgap SrSnO 3 Top-Gated MOSFETs

IEEE Electron Device Letters 2026

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Authors: Junghyun Koo, Weideng Sun, Donghwan Kim, Hongseung Lee, Chengyu Zhu, Kiyoung Lee, Hagyoul Bae, Bharat Jalan, Gang Qiu
DOI: 10.1109/led.2026.3687403
Cited by: 1
References: 20

Fields of Study & Subjects

Electronic and Structural Properties of Oxides Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
6
Pages
1133–1136
Publication date
30 April 2026