1.6-kV Vertical GaN Power MOSFETs With Hybrid Edge Termination
Abstract
We demonstrate 1600 V vertical GaN-on-GaN trench MOSFETs employing hybrid edge termination (HET-MOSFET) that integrates nitrogen ion implantation (NIT) with mesa etching termination (MET). The NIT structure introduces a resistive region to alleviate electric field crowding at the device edges, while the MET structure suppresses potential leakage paths associated with the standalone NIT scheme. As a result, the breakdown voltage is enhanced from 400 V in the MET-MOSFET to 1628 V in the HET-MOSFET. Moreover, thanks to the tailored p-GaN channel layer design, the HET-MOSFET exhibits a low specific on-resistance (RON,sp) of 0.75 mΩ·cm2and a channel mobility (μCH) of 151 cm2/V·s. These results highlight the feasibility of vertical GaN trench MOSFETs for high-voltage and high-power electronics.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Advanced Power Amplifier Design
Publication details
- Journal / source
- IEEE Electron Device Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 47
- Issue
- 7
- Pages
- 1322–1325
- Publication date
- 14 May 2026