2.3-kV Vertical GaN Trench MOSFET with Variable Lateral Ion-implanted Guard Rings

IEEE Electron Device Letters 2026

View at publisher
Authors: Shihao Xu, Cui Yang, Wei Mao, Chao Liu, Ming Du, Ming Xiao, Yuanyuan Xie, Yu DUAN, Yuchuan Ma, Changfa Sun, Dongguo Fan, Guoliang Peng
+6 more Kai Cheng, Maojun Wang, Li Zheng, Zhihong Liu, Jincheng Zhang, Yue Hao
DOI: 10.1109/led.2026.3725710
Cited by: 1
References: 31

Fields of Study & Subjects

GaN-based semiconductor devices and materials Pulsed Power Technology Applications Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
47
Issue
10
Pages
1–1
Publication date
1 January 2026